Imec has demonstrated for the first time fully functional integrated forksheet FETs, with short-channel control (SSSAT=66-68mV/dec) comparable to GAA nanosheet devices down to 22nm gate length. Dual work function metal gates are integrated at 17nm spacing between n- and pFETs, highlighting the key benefit of forksheet devices for advanced CMOS area scaling. The forksheet device ...

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