Siemens acquires Supplyframe for a ‘digital transformation’

The recent component shortage has highlighted the fragility of current supply chains, asserted Siemens, as it announced the acquisition of electronics Design-to-Source platform, Supplyframe. The transaction is expected to close at the end of this financial year. The acquisition is part of Siemens’ digital transformation said AJ Incorvaia, senior vice president, Siemens Digital Industries Software, Electronic ...

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Structure thins silicon capacitors to

Murata has announced a new generation silicon capacitor process which builds devices less than 40µm thick and up to 1.3µF/mm2. Made using semiconductor lithography techniques, the capacitors are intended for high-end applications such as in-package power supply decoupling for mobiles and high-performance computing. The main change in the process is a different 3D structure with ...

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Fusion demo plant to be built at Culham

Today, UKAEA and General Fusion of Canada  have announced an agreement under which General Fusion will build and operate its Fusion Demonstration Plant (FDP) at UKAEA’s Culham Campus. General Fusion will enter into a long-term lease with UKAEA following construction of a new facility at Culham to host the FDP.  The FDP will demonstrate General ...

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OpenRoaming to bridge gap between cellular and WiFi

The Wireless Broadband Alliance (WBA) today announced the launch of WBA OpenRoaming  Release 2, which enables network and service providers, including MNOs, Cable Operators and ISPs to offer enhanced services. OpenRoaming frees users from the need to constantly re-register or re-enter log-in credentials, allowing seamless and instant network access, enterprise-grade security and a carrier-grade Wi-Fi ...

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UK made: 1U modular RF distribution chassis for satcomms

ETL has introduced a 1U version of its Genus-brand modular RF distribution chassis for ground-segment satcomms, adding to its 2U, 3U and 4U version. GNS-101-1U can accept up to 17 of the company’s RF modules, mixed and matched from BUC/LNB power supply’s, frequency converters, matrices, RF-over-fibre, redundancy switches or test loop translators. It has dual-redundant hot-swappable power ...

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PIC32MZ added to interchangeable MCU development boards

MikroElektronika, has introduced a SiBrain interchangeable board MCU board for Microchip’s PIC32MZ1024EFF144 microcontroller, giving access to its 144 pins, 1Mbyte flash memory and 262kbyte of ram. The core in the processor is a 32bit 200MHz (330DMIPS) Warrior M-class from MIPS. The Serbian company is the one behind ‘Click board’ interchangeable peripheral boards which have a standard footprint and ...

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Nexperia to invest $700m

Nexperia is to invest $700 million over the next 12-15 months at its European wafer fabs, assembly factories in Asia and global R&D sites. The investment will boost manufacturing capacity at all sites while supporting R&D  into areas such as GaN-based wide bandgap semiconductors and PMICs. “Nexperia reported robust product sales of $1.4 billion in 2020, ...

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Vodafone goes for 5G Standalone

Vodafone is partnering with Ericsson to deploy a cloud-native dual-mode core for its 5G Standalone network where where all products and solutions are designed to run independently from previous generations of network equipment and technology. The deployment of a dual-mode core, also known as Single Packet Core, will enable 5G Standalone, 5G non-Standalone and 4G ...

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Memory in a good place

Combined DRAM and NAND revenue in 2020 was US$122 billion, up 15% from 2019, says Yole Developpement. Together, DRAM and NAND represent 96% of the stand-alone memory markets.  DRAM and NAND revenues are expected to grow with 15% and 8% CAGRs between 2020 and  2026 respectively.   .After the substantial oversupply in 2019 – with ...

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Imec demoes integrated forksheet FETs for 2nm processes

Imec has demonstrated for the first time fully functional integrated forksheet FETs, with short-channel control (SSSAT=66-68mV/dec) comparable to GAA nanosheet devices down to 22nm gate length. Dual work function metal gates are integrated at 17nm spacing between n- and pFETs, highlighting the key benefit of forksheet devices for advanced CMOS area scaling. The forksheet device ...

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