Vishay has introduced a 30V n-channel mosfet with an on-resistance of 1.5mΩ (typ) at 4.5Vgate while achieving a 29.8mΩnC gate figure-of-merit (FoM). “The SiSS52DN’s FoM represents a 29% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications,” according to New Yorker Electronics, which is stocking ...

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