UCLA engineers have monolithically integrated a boron arsenide heat spreader into a GaN HEMT logic chip to improve cooling. At the same time they built similar chips with diamond and silicon carbide heat spreaders. The diamond and SiC circuits had hotspots at around 137°C and 167°C respectively, according to the university, while those in the BAs-cooled ...
This story continues at Boron arsenide spreads heat better than diamond
Or just read more coverage at Electronics Weekly