Jedec’s new wide bandgap committee has issued its first standards paper – JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices. JEP173 covers GaN power FETs, providing a method for the consistent measurement of drain-to-source resistance in the ON-state (RDS(ON)) encompassing dynamic effects. These dynamic effects are characteristic of GaN power FETs, ...

This story continues at Jedec wide bandgap committee issues first standard

Or just read more coverage at Electronics Weekly