Imec has used an optimised CMOS process to fabricate vertically stacked gate-all-around (GAA) silicon nanowire transistors in a functional ring oscillator. The demonstrator shows the enormous promise this technology holds for realizing sub-5nm technology nodes. Gate-all-around (GAA) MOSFETs based on vertically stacked horizontal nanowires or nanosheets are promising candidates to succeed FinFETs in sub-5nm technology ...

This story continues at Imec fabs ring oscillator using GAA nanowire transistors

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