IEDM: Three-electron scattering discovery improves SiC mosfets

The causes of energy-wasting  ‘three-electron scattering’ have been quantified in silicon carbide devices, as far as Mitsubishi and the University of Tokyo can tell. Factors limiting resistance under SiC interface “Although it has been recognised that electron scatting under the SiC interface is limited by three factors, namely, the roughness of the SiC interface, the ...

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Smiths Interconnect offers wafer-level chip test probes

Smiths Interconnect has introduced a range of probe heads for wafer-level chip-scale package testing. The probe heads in the Volta series are used for testing the chips while in their wafer form. In the design spring probe contacts are used in place of cantilever and traditional vertical probe card technologies. The am is to create ...

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Recom AC/DC converter works in standby for IoT nodes

Recom has developed a range of 10W AC/DC converters in an industry standard 2 x 1-inch package. The converters have an input voltage range from 85 to 305VAC. They are designed as AC/DC supplies for IoT systems in which the sensor nodes operate at least part of the time in a standby state. The 10W ...

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Plexus sees strong European business, invests in design centre

Plexus has expanded its European design centre for healthcare, industrial, aerospace, defence and communications sectors. The Oradea Design Centre was opened in Romania in 2013. Plexus said that in the last fiscal year revenues from the EMEA region served by the centre grew by 13% while Oradea manufacturing revenue grew 30%. This new investment in ...

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Velodyne to sell 128-channel LIDAR sensor

Velodyne has announced a 128-channel LiDAR sensor which, it says, has ten times the resolving power of the company’s previous  model, the HDL-64. As well as doubling the channel numbers, channel density has been tripled and the zoom resolution doubled, enabling it to detect objects more clearly and identify them more accurately. The resulting range is ...

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e-peas builds distie network

e-peas, the Belgian energy harvesting IC specialist, has begun building a distribution network snd has appointed three disties. In the UK, the company has appointed Solid State Supplies (www.sssltd.com), while Unitronic (www.unitronic.de) and Kamaka (www. kamaka.de) will be providing coverage for the DACH region (Germany, Austria and Switzerland).   Each of these disties has the  application ...

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Renesas and HELLA Aglaia combine on ADAS front camera system

Renesas and HELLA Aglaia, the visual sensor systems specialist, have announced their open and scalable front camera system for ADAS. Thefront camera system combines the R-Car V3M, Renesas’ high-performance, low-power image recognition SoC for New Car Assessment Program (NCAP), and HELLA Aglaia´s  camera software designed to meet level 2 (partial automation) and level 3 (conditional ...

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Riot Micro out of stealth mode with NB-IoT/LTE Cat M1 baseband

Riot Micro, a Vancouver LTE start-up, comes out of stealth mode today to announce it is sampling a baseband processor for the NB-IoT and LTE Cat M1 standards which claims to beat existing chips for power and price. The chip isdesignated RM1000 and comes in an 8 x 8-mm 68-pad QFN package or a 3.5 ...

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PEZY president arrested

The president of PEZY Computing, a fabless Japanese chip company which makes processors for Japan’s supercomputer projects, has been arrested for fraud. PEZY designed the processors for Japan’s Gyoukou supercomputer which was ranked last month as the world’s fourth most powerful supercomputer at 19.4 petaflops. PEZY’s president is Motoaki Saito. Another PEZY employee, Daisuke Suzuki, ...

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Imec fabs ring oscillator using GAA nanowire transistors

Imec has used an optimised CMOS process to fabricate vertically stacked gate-all-around (GAA) silicon nanowire transistors in a functional ring oscillator. The demonstrator shows the enormous promise this technology holds for realizing sub-5nm technology nodes. Gate-all-around (GAA) MOSFETs based on vertically stacked horizontal nanowires or nanosheets are promising candidates to succeed FinFETs in sub-5nm technology ...

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