Isolated gate driver works up to 2.3kV

Infineon has created a family of single-channel isolated gate driver for IGBTs and silicon carbide mosfets with up to 300kV/μs common-mode transient immunity and up to +6  and -8.5 A typical peak current. Called 1ED332x, and branded ‘F3 Enhanced’, they come in 300mil wide DSO 16 packaging with 8mm creepage distance. Operation is expected with devices ...

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