600V super-junction mosfets span 190 to 580mΩ

Korean transistor maker Magnachip has announced today 11 600V super-junction mosfets Describing them as ‘2.5th generation’, they are claimed to have lower switching loss and better power efficiency than its previous devices. Rds(on) varies between 190 and 580mΩ and packages include DPAK TO-220F and TO-220SF (see photo). A gate-source Zener diode is embedded to protect against ...

This story continues at 600V super-junction mosfets span 190 to 580mΩ

Or just read more coverage at Electronics Weekly