The UK government is backing the Compound Semiconductor Centre and Newport Wafer Fab to develop a 200mm Gallium Nitride power transistor foundry process. Both these organisations are inside the compound semiconductor cluster in South Wales. Coordinated jointly by the Centre and Fab, the intention is to deliver a 650V GaN-on-silicon HEMTs (all GaN power transistors ...

This story continues at UK made: 650V 200mm GaN foundry process for automotive in Wales

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