Infineon has put a 650V silicon IGBT alongside a silicon carbide diode in the same TO-247 packages. “Due to a freewheeling SiC Schottky barrier diode, the CoolSiC Hybrid IGBTs perform with significantly reduced switching losses at almost unchanged dv/dt and di/dt values,” according to the company. “They offer up to 60% reduction of energy-on and ...

This story continues at SiC flywheel diode plus 650V silicon IGBT in same package

Or just read more coverage at Electronics Weekly