EPC improves its 100V GaN power transistor offering

Efficient Power Conversion has announced a pair of 100V gallium nitride (GaN) power transistors. EPC2218 3.2mΩmax 60A (231A pulsed) LGA 3.5 x 1.95 EPC2204 6mΩmax 29A (125A pulsed) 2.5 x 1.5mm LGA They have almost 20% lower Rds(on) that the company’s previous generation of GaN devices, it said. With 5V on the gate, EPC2204 has ...

This story continues at EPC improves its 100V GaN power transistor offering

Or just read more coverage at Electronics Weekly