Low-k dielectric for future chips expands in place to fill gaps

Researchers at Leuven University and Belgian research lab Imec have developed a form-in-place low-k dielectric for insulating on-chip interconnect. The technique uses nano-porous metal-organic frameworks. “We’re using metal-organic frameworks as the insulating substance. These are materials that consist of metal ions and organic molecules. Together, they form a crystal that is porous yet sturdy,” said ...

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