Hynix sampling 96-layer Tb NAND

Hynix says it is sampling its 96-layer Tbit  QLC ‘4D’ NAND. Hynix calls its technology 4D  because it combines 3D Charge Trap Flash technology (CTF) with Periphery Under Cell (PUC). Hynix says 96-layers gives 49% improved bit density over 72-layer 3D NAND products. Hynix plans to develop a QLC software algorithm and controller and launch its ...

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TT debuts Pola Power

TT Electronics has brought out a connector called Pola Power approved for use on rail and military vehicles that can also be qualified to suit other applications in the power distribution and green energy markets such as gearboxes, air conditioning, supper-accumulators and batteries. This highly single pole power connector with bayonet coupling offers a finger ...

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Imagination licenses ray-tracing tech

Imagination has put its PowerVR Ray Tracing technology up for licensing, enabling image rendering using light-modelling techniques to be integrated into GPUs across mobile, automotive, server and other markets. The technology is part of PowerVR’s ongoing GPU roadmap which delivers optimal PPA (Power Performance Area) solutions. The PowerVR Ray Tracing architecture is a high-efficiency approach ...

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TI widens lead as No.1 analogue supplier

With analogue IC  sales of $10.8 billion and 18% marketshare, Texas Instruments maintained its grip as the world’s leading supplier of analogue ICs, says IC Insights. TI’s 2018 analog pue sales increased $0.9 billion over 2017 and were nearly twice those of second-ranked ADI and more than 10x those of tenth-ranked Renesas. TI’s 2018 analogue ...

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PCIM 2019: Video Interview – Murata on high efficiency 12V 6A PoL modules

At PCIM 2019, we caught up with Nigel Brooke of Murata as part of our promotional coverage for the event. He discusses Murata releasing its high efficiency 12V 6A PoL modules, which use a dual stage architecture. This unique architecture enables higher efficiency and smaller form factors than competitive devices for use in communications infrastructure ...

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PCIM: Plastic 100A 1.2kV 3ph IGBT module with integrated drivers

Mitsubishi launched three high current 1.2kV three phase IGBT modules at PCIM in Nuremberg, in transfer-moulded packages. Branded ‘Large DIPIPM+’, the modules include high and low-side drive ICs. “Of special note, one of the modules achieves a world’s first high-density output of 100A/1.200V in its transfer-mould package,” said the firm, with the caveat that this is ...

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PCIM 2019: Video Interview – Pre-Switch on AI and soft-switching for DC/AC applications

At PCIM 2019, we caught up with Bruce Renouard as part of our promotional coverage for the event. He discusses how Pre-Switch is offering soft-switching for DC/AC applications, as well as AC/DC ones. And that soft-switching is good for any power converter technology, where efficiency or cost reduction is important. AI is used to sense 20 ...

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PCIM: PCB-mount isolated current transducer for ac and dc up to 200A

At PCIM this week, LEM announced a family of PCB-mount transducers for isolated dc, ac and pulsed current measurement of currents from 100A to 200A nominal. The LZSR family, as it will be known, consists of: LZSR 100-P (100Arms nominal) LZSR 150-P (150Arms nominal, 450A peak) LZSR 200-P (200A) Peak current is up to 3 ...

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PCIM 2019: Video Interview – Nexperia’s LFPAK family offer a 60% footprint reduction and lower profile

At PCIM 2019, we caught up with Chris Boyce of Nexperia as part of our promotional coverage for the event. He discusses Nexperia’s new LFPAK family of products – specifically, the LFPAK88 – that result in 40V MOSFETs delivering a low RDS(on) of 0.7mΩ. The LFPAK88 devices replace larger power packages such as D²PAK and ...

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PCIM: UnitedSiC adds 650V SiC power transistors

UnitedSiC has added seven TO220-3L and D2PAK-3L device/package combinations to its UJ3C (general purpose) and UF3C (hard switched) series of 650V SiC FETs. The firm uses cascode pairs within its devices, with a Silicon carbide JFET paired with a custom-developed silicon mosfets – the latter providing well-supported gate characteristics to the devices. “Unique to the UJ3C ...

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