Manchester thin-film oxide transistor hits 1GHz

The university of Manchester has made a 1GHz thin-film transistor from amorphous IGZO – indium gallium zinc oxide. The devices, created with Shandong University in China, are made on a high-resistance silicon substrate using Ta2O5 gate dielectric. The material is 80% transparent, opening the door to display applications. “Making a high performance device, like our GHz ...

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