Renesas has prototyped its split gate MONOS (SG-MONOS) charge trap flash technology which uses 3D fin-shaped transistors and is intending to use the trchnology in to put 100MB memories onto MCUs made on a 16/14nm process. In 2016, Renesas announced the successful development of  fin-type SG-MONOS flash memory cell by applying and adopting charge trap type flash ...

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