Leti has integrated hybrid III-V silicon lasers on 200mm wafers using standard CMOS process flow. This shows the way to transitioning away from 100mm wafers and a process based on bulk III-V technology that requires contacts with noble metals and lift-off based patterning. The project, carried out in the framework of the IRT Nanoelec ...
This story continues at LETI integrates III-V lasers on 200mm wafers using CMOS flow
Or just read more coverage at Electronics Weekly