The causes of energy-wasting  ‘three-electron scattering’ have been quantified in silicon carbide devices, as far as Mitsubishi and the University of Tokyo can tell. Factors limiting resistance under SiC interface “Although it has been recognised that electron scatting under the SiC interface is limited by three factors, namely, the roughness of the SiC interface, the ...

This story continues at IEDM: Three-electron scattering discovery improves SiC mosfets

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