Integra Technologies, the RF and microwave transistor and amplifier specialist, has announced a pair of 135 W and a 130 W GaN-on-SiC transistors for S-band radar applications. IGT2731M130 is a 50-Ohm matched high-power GaN HEMT transistor, suppling a minimum of 130 W of peak pulsed power, a gain of 13.5 dB and a drain efficiency ...

This story continues at GaN-on-SiC transistors for S-band radar

Or just read more coverage at Electronics Weekly