Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode HEMT for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company’s InnoGaN technology which features ultra-low on resistance. “ Innoscience  now ...

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