STMicroelectronics had debuted its third generation of silicon carbide mosfet with a 650V device aimed at electric-vehicle power-trains. Called SCT040H65G3AG, the part typically has a 40mΩ on-resistance and can carry 30A through its Kelvin source H2PAK-7 package (right). Regarding gen 3 “ST’s new SiC devices are specifically optimised for automotive applications including traction inverters, on-board chargers and dc-dc ...

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