Imec and AIXTRON, the specialist in deposition equipment for compound semiconductor materials, have demonstrated epitaxial growth of GaN buffer layers qualified for 1200V applications on 200mm QST substrates, with a hard breakdown exceeding 1800V. The manufacturability of 1200V-qualified buffer layers opens doors to highest voltage GaN-based power applications such as electric cars, previously only with ...

This story continues at Epitaxial growth of GaN buffer layers demo-ed at Imec

Or just read more coverage at Electronics Weekly