IGaN of Singapore is claiming lower losses from its 200mm RF GaN-on-silicon epi wafers. “Despite the great promise showcased by GaN-on-Si RF electronics, there remain few issues to be resolved,” according to company technologist Dr Karthikeyan S. “One such issue is the presence of parasitic channel formed at III-nitride/silicon interface, which leads to parasitic loss, ...

This story continues at Lower parasitic loss in 200mm RF GaN-on-Si epi wafer

Or just read more coverage at Electronics Weekly