Vishay has introduced a 30V p-channel power mosfet with an on-resistance of 1.7mΩ at 10V, claiming it to be the first ever. Called SiRA99DP, it comes in a thermally-enhanced SO-8 package and uses the company’s fourth-generation TrenchFET process. “Combining this low Rds(on) with a gate charge of 84nC, the SiRA99DP delivers best-in-class gate charge times on-resistance of ...

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