Toshiba has introduced eight super junction N-channel power MOSFETs to strengthen its  DTMOSVI series. The  650V-rated devices claim to deliver a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation. As a consequence, they can raise the efficiency of switch-mode power supplies ...

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