CEA-Leti scientists have made FDSOI CMOS at 500°C, “while showing strong performance gains especially in p-type MOS logic devices”, according to the French lab, which has branded the process ‘CoolCube’. 500°C processing is important when trying to shrink die by building CMOS with p-channel mosfets above rather than next to their n-channel counterparts – called a ‘3D ...

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