CEA-Leti has demonstrated fabrication of a new gate-all-around (GAA) nanosheet device as an alternative to FinFET technology targeting high-performance (HPC) applications such as smartphones, laptops, and mobile systems with data collection and processing involving low-power and high-speed operation.  Institute researchers fabricated GAA nanosheet transistors with seven levels of stacked silicon channels, more than twice as ...

This story continues at Leti demoes GAA nanosheet device

Or just read more coverage at Electronics Weekly