Samsung has launched ‘Flashbolt’, its third-generation High Bandwidth Memory 2E (HBM2E). The 16GB HBM2E is suited to HPC systems.  The 16GB capacity is achieved by vertically stacking eight layers of 10nm-class (1y) 16Gb DRAM die on top of a buffer chip. Flashbolt has a data transfer speed of 3.2Gbps a memory bandwidth of 410GB/s per stack. ...

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