Leti has developed a silicon nitride (Si3N4) 200mm platform for developing ultralow loss, high-power photonics in UV through mid-infrared wavelengths. Available in CEA-Leti’s SiN platform in a multi-project-wafer program, the breakthrough targets designers in integrated quantum optics, LiDAR, biosensing, and imaging whose projects require ultralow propagation losses and high-power handling capability.  This ultralow-loss SiN layer is ...

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