650V SiC FET scores 34mΩ in 8×8 package

UnitedSiC has introduced what it claims is industry’s lowest Rds(on) 650V SiC FET in a low-profile DFN 8×8 surface-mount package. Called UF3SC065030D8S, its Rds(on) is 34mΩ, and  UF3SC065040D8S is a cheaper partner device that achieves 45mΩ. “Both SiC FETs have a current rating of 18A (limited by wire count in the package), and a maximum operating ...

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