Samsung has started the ramp of  90-layer 256Gb 3D TLC NAND with the ‘Toggle DDR 4.0’ interface which transfers data between storage and memory at 1.4Gbps which is a 40% increase from its 64-layer predecessor. The energy efficiency of Samsung’s new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage ...

This story continues at Samsung ramping 90-layer 256Gb TLC NAND with Toggle DDR 4.0 interface

Or just read more coverage at Electronics Weekly