STMicroelectronics has signed an agreement on LDMOS – Laterally Diffused Metal Oxide Semiconductor RF power technology – from Innogration Technologies, a fabless semiconductor company headquartered in Suzhou, China, specializing in the design and manufacturing of RF power semiconductor devices, modules, and sub-system assemblies. Combining a short conduction-channel length with a high breakdown voltage, LDMOS devices ...

This story continues at ST and Innogration combine on LDMOS

Or just read more coverage at Electronics Weekly