Integra Technologies had announced a matched, GaN-on-SiC transistor, offering 50W at 5-6GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 HEMT is matched to 50Ω and supplies 50W peak pulsed power at 50V drain bias. Actual range is 5.2-5.9GHz with instantaneous response, and 14dB of gain is available at 43% efficiency (1ms/15% pulse). It comes ...

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