Wolfspeed has introduced 28V GaN HEMT RF power devices  capable of higher frequency operation to 8GHz. The 28V GaN HEMT devices are made on Wolfspeed’s 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in ...

This story continues at Wolfspeed 28V GaN HEMT power devices capable of 8GHz

Or just read more coverage at Electronics Weekly