Samsung develops Tb V-NAND

Samsung says it has produced a Terabit 3D NAND flash memory which will be in production next year. Samsung’s intention is to stack 16 Tbit die to deliver a 2TB memory in a chip package. The Tbit chip has 96 layers and four-bit-per-cell (QLC) technology.

This story continues at Samsung develops Tb V-NAND

Or just read more coverage at Electronics Weekly

Samsung develops Tb V-NAND

Samsung says it has produced a Terabit 3D NAND flash memory which will be in production next year. Samsung’s intention is to stack 16 Tbit die to deliver a 2TB memory in a chip package. The Tbit chip has 96 layers and four-bit-per-cell (QLC) technology.

This story continues at Samsung develops Tb V-NAND

Or just read more coverage at Electronics Weekly