Rohm revealed details of its fourth generation of silicon carbide mosfets at PCIM in Nurembeg, claiming up to 50% lower switching loss and 40 % reduction of on-resistance compared to its earlier parts, without sacrificing short-circuit ruggedness. They are all trench types and have more flexible gate drive requirements than before – operating at 15 ...

This story continues at PCIM: Rohm’s 4th generation SiC mosfets

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