STMicroelectronics and Macom Technology Solutions have announced prototypes on their fledgling RF GaN-on-Si process, which the companies aim to pitch against RF LDMOS (laterally-diffused metal-oxide semiconductor) for RF power amplifiers, and as lower-cost alternative to RF GaN-on-SiC (silicon carbide). “GaN can offer superior RF characteristics and significantly higher output power than LDMOS for these RF PAs,” ...

This story continues at RF GaN-onSi prototypes from STMicroelectronics – Macom partnership

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