Infineon has announced 2kV silicon carbide mosfets and diodes for use in high-power inverters with 1.5kV dc links. “Increasing demand for high power density is pushing developers to adopt 1,500V dc links in their applications,” according to the company. “However, 1,500V dc based systems pose more challenges on system design, which typically requires a multi-level topology, ...

This story continues at PCIM: 2kV SiC mosfets from Infineon

Or just read more coverage at Electronics Weekly