Nexperia has announced its entry into the GaN FET market with the introduction of the 650V GAN063-650WSA, with a gate-source voltage (VGS) of +/-20V and a temperature range of -55 to 175°C. The GAN063-650WSA features a low RDS(on) – down to 60 mΩ – and fast switching for efficiency. The company is targeting applications including ...

This story continues at Nexperia joins the GaN FET market for high voltage applications

Or just read more coverage at Electronics Weekly