Renesas has developed a 22nm process for embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM). The test chip includes a 32Mbit embedded MRAM memory cell array and achieves 5.9-nanosecond (ns) random read access at a maximum junction temperature of 150°C, and a write throughput of 5.8-megabyte-per-second (MB/s). MRAM fabricated in BEOL is advantageous compared to flash ...

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