EPC has announced a 100V 3.9mΩ radiation-hardened GaN HEMT. Called EPC7018 it comes in a 13.9mm2 chip-scale package (the ‘flag’ in the image) and can handle pulses up to 345A. The total dose radiation rating is greater than 1Mrad, and SEE immunity for LET of 85MeV/(mg/cm2). “EPC7018 offers designers a high power, low on-resistance device enabling a new ...

This story continues at 100V 3.9mΩ GaN transistor is rad-hardened

Or just read more coverage at Electronics Weekly