GaN transistor maker Innoscience Technology is disclosing research on 650V device reliability at the IEEE International Symposium on Power Semiconductor Devices (ISPSD) in Vancouver this week. The company is fabricating GaN-on-Si HEMTs on a 200mm CMOS-compatible process, for a power factor correction (PFC) boost converter application. Hard switching test Vds=600V Vgs=6V 100kHz According to the company, ...

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