Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates. The addition of these components enables the design of chips with extended functionality and increases performance that takes monolithically-integrated GaN power ICs one step further. ...

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