ST’s STDRIVEG600 half-bridge gate driver has high current output and 45ns propagation delay, closely matched between high-side and low-side outputs, to handle high-frequency switching of GaN enhancement-mode FETs. Also suitable for driving N-channel silicon MOSFETs at up to 20V, the STDRIVEG600 allows the flexibility to apply up to 6V gate-source voltage (VGS) on GaN devices to ...

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