On Semiconductor announced 1,200V SiC diodes with automotive AECQ101 and industrial qualification at virtual PCIM. Of the diodes, On said: “The new design improves on the first generation SiC diodes thanks to a smaller die size and lower capacitance. NVDSH20120C, NDSH20120C, NVDSH50120C, and NDSH50120C deliver a lower forward voltage drop and a 4x increase in ...

This story continues at PCIM: On’s 1.2kV SiC diodes and 650V superjunction mosfets

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