UnitedSiC has introduced silicon carbide FETs in D2PAK-7L surface mount packages. They cover 650V and 1,200V operation, and have on-resistances from 30 to 80mΩ (650V) or 40 to 150mΩ (1.2kV). “The D2PAK-7L SiC FETs [have] a Kelvin source connection improving gate drive return performance,” according to the company. “Through the utilisation of silver sintering, die ...
This story continues at 650V and 1.2kV SiC FETs in D2PAK-7L
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