GeneSiC has brought out its 3rd generation SiC MOSFETs offered in  low-inductance discrete packages (SMD and through hole), and optimised for power system designs requiring elevated efficiency levels and fast switching speeds. They feature: Superior QG x RDS(ON) figure-of-merit Low conduction losses at all temperatures 100 % avalanche tested – Robust UIL capability is a ...

This story continues at GeneSiC delivers 3rd Gen MOSFETs

Or just read more coverage at Electronics Weekly