STMicroelectronics has created a pair of isolated gate drivers for silicon carbide mosfets. Called STGAP2SiCS, they are capable of producing a gate-driving voltage up to 26V, and there is a 15.5V under-voltage lock-out to prevent under-driving. Dual input pins provide a choice of gate-drive signal polarity. Inputs are compatible with CMOS and TTL logic down to ...

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