STMicroelectronics has introduced an asymmetric half-bridge pair of power GaN transistors in a small (9 x 9 x 1mm GQFN) package that includes driver and protection circuits. Called MasterGaN2, the transistors are: 225mΩ 6.5A high-side 150mΩ 10A low-side “MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride transistors, delivering an integrated GaN ...

This story continues at Power chip switches 600V with asymmetric GaN power, and includes drivers

Or just read more coverage at Electronics Weekly