Researchers at the University of Southern California’s Viterbi School of Engineering have come up with a new memory technology based on ferroelectric tunnelling junction (FTJ) technology. FTJ devices promise to increase data upload speed, extend smartphone battery life, and reduce data corruption. Han Wang, associate professor of electrical and computer engineering at the USC Viterbi ...
This story continues at New memory device built using FTJ technology
Or just read more coverage at Electronics Weekly